NE85633-A
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Transistors RF Bipolar Small Signal NPN High Frequency
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Collector-Base Capacitance-Max 1pF
Highest Frequency Band ULTRA HIGH FREQUENCY B
Continuous Collector Current 100mA
Frequency - Transition 7GHz
Transition Frequency 7000MHz
Gain 11.5dB
Collector Emitter Breakdown Voltage 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V
Max Collector Current 100mA
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power Dissipation 200mW
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G3
Pin Count 3
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 200mW
HTS Code 8541.21.00.75
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Strip
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-236-3, SC-59, SOT-23-3
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