NE68139-T1
RoHS
/
Package TO-253-4, TO-253AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
TRANS NPN 1GHZ SOT-143
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Noise Figure (dB Typ @ f) 1.2dB ~ 2dB @ 1GHz
Collector-Base Capacitance-Max 0.8pF
Highest Frequency Band ULTRA HIGH FREQUENCY B
Continuous Collector Current 65mA
Frequency - Transition 9GHz
Max Breakdown Voltage 10V
Transition Frequency 9000MHz
Gain 13.5dB
Collector Emitter Breakdown Voltage 10V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 7mA 3V
Max Collector Current 65mA
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Case Connection COLLECTOR
Power Dissipation 200mW
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Base Part Number NE68139
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 200mW
Additional Feature LOW NOISE
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case TO-253-4, TO-253AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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