AT-41535G
RoHS 
RoHS compliant
RoHS compliantPackage 4-SMD (35 micro-X)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT NPN 12V 0.06A 4-Pin Case 35 Micro-X
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Noise Figure (dB Typ @ f) 1.3dB ~ 3dB @ 1GHz ~ 4GHz
Highest Frequency Band S B
Frequency - Transition 8GHz
Current - Collector (Ic) (Max) 60mA
Voltage - Collector Emitter Breakdown (Max) 12V
Gain 10dB ~ 18dB
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 8V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 500mW
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-MRDB-F4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) 260
Terminal Form FLAT
Terminal Position RADIAL
HTS Code 8541.21.00.75
Additional Feature HIGH RELIABILITY
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2008
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 4-SMD (35 micro-X)
Mounting Type Surface Mount
Alternative Model
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