AT-41511-TR1G
RoHS
/
Package TO-253-4, TO-253AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
AVAGO TECHNOLOGIES AT-41511-TR1G Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 225 mW, 50 mA, 150
PDF
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Buying Options
Total Price: USD $4.56
Unit Price: USD $4.56475
≥1 USD $4.56475
≥10 USD $3.7449
≥100 USD $3.62805
≥500 USD $3.5112
≥1000 USD $3.39435
Inventory: 9463
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Noise Figure (dB Typ @ f) 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
Continuous Collector Current 50mA
hFE Min 30
Emitter Base Voltage (VEBO) 1.5V
Collector Base Voltage (VCBO) 20V
Max Breakdown Voltage 12V
Transition Frequency 10GHz
Gain 11dB ~ 15.5dB
Collector Emitter Breakdown Voltage 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 12V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Case Connection COLLECTOR
Power Dissipation 225mW
Configuration SINGLE
Number of Elements 1
Base Part Number AT41511
Frequency 10GHz
Current Rating 50mA
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 225mW
Voltage - Rated DC 1.5V
Subcategory Other Transistors
Additional Feature HIGH RELIABILITY
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2005
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case TO-253-4, TO-253AA
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Gold
Alternative Model
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