AT-41500-GP4
RoHS
/
Package Die
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Transistors RF Bipolar Transistor Si
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Number of Pins 2
Transistor Element Material SILICON
Technical
Operating Temperature 200°C TJ
Packaging Tray
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 500mW
Terminal Position UPPER
Frequency 8GHz
Number of Elements 1
Configuration SINGLE
Power Dissipation 500mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 8 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 60mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 8V
Collector Emitter Breakdown Voltage 12V
Gain 8dB ~ 17dB
Transition Frequency 8000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 60mA
Noise Figure (dB Typ @ f) 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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