AT-41435G
RoHS 
RoHS compliant
RoHS compliantPackage 4-SMD (35 micro-X)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT NPN 12V 0.06A 4-Pin Case 35 Micro-X
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Buying Options
Total Price: USD $96.03
Unit Price: USD $96.03265
≥1 USD $96.03265
≥10 USD $92.93565
≥100 USD $89.8377
≥500 USD $80.54385
Inventory: 33
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 4-SMD (35 micro-X)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2002
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY, LOW NOISE
HTS Code 8541.21.00.40
Subcategory Other Transistors
Terminal Position UNSPECIFIED
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code X-CXMW-F4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 500mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 8V
Gain 10dB ~ 18.5dB
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 60mA
Transition Frequency 8000MHz
Frequency - Transition 8GHz
Power Dissipation-Max (Abs) 0.5W
Highest Frequency Band C B
Noise Figure (dB Typ @ f) 1.3dB ~ 3dB @ 1GHz ~ 4GHz
Compliance
RoHS Status RoHS Compliant
Alternative Model
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