ULN2003ANE4
RoHS 
RoHS compliant
RoHS compliantPackage 16-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description
Bipolar Transistor Array, Darlington, NPN, 50 V, 500 mA, 1000 hFE, DIP
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Buying Options
Total Price: USD $0.22
Unit Price: USD $0.22325
≥1 USD $0.22325
≥10 USD $0.18335
≥100 USD $0.17765
≥500 USD $0.17195
≥1000 USD $0.16625
Inventory: 446762
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 16-DIP (0.300, 7.62mm)
Number of Pins 16
Weight 951.693491mg
Transistor Element Material SILICON
Technical
Operating Temperature -20°C~70°C TA
Packaging Tube
Series Automotive, AEC-Q100
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8542.39.00.01
Terminal Position DUAL
Base Part Number ULN2003
Pin Count 16
Output Voltage 50V
Number of Elements 7
Polarity NPN
Configuration COMPLEX
Transistor Application SWITCHING
Transistor Type 7 NPN Darlington
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
Current - Collector Cutoff (Max) 50μA
JEDEC-95 Code MS-001BB
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500μA, 350mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 1.1V
VCEsat-Max 1.6 V
Dimensions
Height 5.08mm
Length 19.3mm
Width 6.35mm
Thickness 3.9mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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