ULN2003A
RoHS 
RoHS compliant
RoHS compliantPackage 16-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description
STMICROELECTRONICS - ULN2003A - Bipolares Transistor-Array, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
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Buying Options
Total Price: USD $0.49
Unit Price: USD $0.4928
≥1 USD $0.4928
≥10 USD $0.4224
≥100 USD $0.394592
≥500 USD $0.315568
≥1000 USD $0.293075
≥3000 USD $0.247984
Inventory: 20171
Minimum: 1
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Technical Details
Technical
Output Current 500mA
Transistor Application SWITCHING
Transistor Type 7 NPN Darlington
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA 2V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500μA, 350mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 1.1V
VCEsat-Max 1.6 V
Number of Channels 7
Configuration COMPLEX
Polarity NPN
Number of Elements 7
Output Voltage 50V
Pin Count 16
Base Part Number ULN2003
Current Rating 500mA
Terminal Position DUAL
Max Power Dissipation 2.25W
Voltage - Rated DC 50V
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 16
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Packaging Tube
Operating Temperature -40°C~85°C TA
Dimensions
Height 4.59mm
Length 20mm
Width 7.1mm
Physical
Transistor Element Material SILICON
Weight 1.627801g
Number of Pins 16
Package / Case 16-DIP (0.300, 7.62mm)
Mounting Type Through Hole
Mount Through Hole
Contact Plating Gold
Supply Chain
Factory Lead Time 15 Weeks
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
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