Collector Emitter Breakdown Voltage 200V
Vce Saturation (Max) @ Ib, Ic 2V @ 1.5mA, 1A
Current - Collector Cutoff (Max) 100μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 4V
Collector Emitter Voltage (VCEO) 2V
Transistor Type 4 NPN Darlington (Quad)
Polarity/Channel Type NPN
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory Other Transistors
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 0.1
Number of Terminations 10
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ