SMA6010
RoHS 
RoHS compliant
RoHS compliantPackage 12-SIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description
TRANS 3NPN/3PNP DARL 60V 12SIP
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Buying Options
Total Price: USD $4.66
Unit Price: USD $4.664
≥1 USD $4.664
≥10 USD $3.915507
≥100 USD $3.167674
Inventory: 331
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 12-SIP
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Published 2001
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 0.067
HTS Code 8541.29.00.75
Subcategory BIP General Purpose Powers
Max Power Dissipation 4W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
JESD-30 Code R-PSIP-T12
Qualification Status Not Qualified
Number of Elements 6
Configuration COMPLEX
Power - Max 4W
Transistor Application SWITCHING
Polarity/Channel Type NPN AND PNP
Transistor Type 3 NPN, 3 PNP Darlington (3-Phase Bridge)
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 3A 4V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 6mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 75MHz
Frequency - Transition 75MHz
Fall Time-Max (tf) 1500ns
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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