DME205010R
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description
Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
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Buying Options
Total Price: USD $3.22
Unit Price: USD $3.2224
≥1 USD $3.2224
≥10 USD $2.64385
≥100 USD $2.5612
≥500 USD $2.47855
≥1000 USD $2.3959
Inventory: 1083
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DME20501
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power - Max 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 150MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 150MHz
Max Breakdown Voltage 50V
hFE Min 210
Continuous Collector Current -100mA
Dimensions
Height 1.1mm
Length 2.9mm
Width 1.5mm
Compliance
RoHS Status RoHS Compliant
Alternative Model
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