DMA204030R
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description
Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
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Technical Details
Compliance
RoHS Status RoHS Compliant
Dimensions
Width 1.5mm
Length 2.9mm
Height 1.1mm
Technical
hFE Min 210
Emitter Base Voltage (VEBO) -5V
Frequency - Transition 150MHz 130MHz
Max Breakdown Voltage 50V
Collector Emitter Saturation Voltage -600mV
Transition Frequency 150MHz
Current - Collector (Ic) (Max) 100mA 500mA
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA / 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max) 100μA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 10V / 120 @ 150mA 10V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 500mV
Transistor Type 2 PNP (Dual)
Gain Bandwidth Product 150MHz
Transistor Application AMPLIFIER
Element Configuration Dual
Polarity PNP
Number of Elements 2
Base Part Number DMA20403
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 300mW
HTS Code 8541.21.00.75
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 6
Package / Case SOT-23-6
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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