Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 180V
Max Breakdown Voltage 160V
Collector Emitter Saturation Voltage 200mV
Transition Frequency 100MHz
Collector Emitter Breakdown Voltage 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Max Collector Current 200mA
Collector Emitter Voltage (VCEO) 160V
Transistor Type 2 NPN (Dual)
Gain Bandwidth Product 300MHz
Transistor Application AMPLIFIER
Element Configuration Dual
Max Power Dissipation 200mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ