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RoHS
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Package DIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description
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Inventory: 6518
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Technical Details

Compliance

RoHS Status Non-RoHS Compliant

Technical

DC Current Gain-Min (hFE) 25
Frequency - Transition 50MHz
Transition Frequency 50MHz
Collector Emitter Breakdown Voltage 250V
JEDEC-95 Code TO-116
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 700mV
Polarity/Channel Type NPN AND PNP
Power Dissipation-Max 750mW
Configuration SEPARATE, 4 ELEMENTS
Number of Elements 4
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position DUAL
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 14
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2012

Physical

Transistor Element Material SILICON
Package / Case DIP
Mount Through Hole

Supply Chain

Factory Lead Time 12 Weeks

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