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Package DIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description Bipolar Transistors - BJT PNP Quad Transistor
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Package / Case DIP
Transistor Element Material SILICON

Technical

Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 16
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 16
JESD-30 Code R-PDSO-G16
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 4
Polarity PNP
Configuration SEPARATE, 4 ELEMENTS
Power Dissipation-Max 500mW
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 200mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 450MHz
Frequency - Transition 200MHz
DC Current Gain-Min (hFE) 30

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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