MPQ3798
RoHS
/
Package DIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
DC Current Gain-Min (hFE) 125
Frequency - Transition 60MHz
Transition Frequency 60MHz
Collector Emitter Breakdown Voltage 40V
JEDEC-95 Code TO-116
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 250mV
Polarity/Channel Type PNP
Power Dissipation-Max 500mW
Configuration SEPARATE, 4 ELEMENTS
Number of Elements 4
Qualification Status Not Qualified
Pin Count 14
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position DUAL
Subcategory Other Transistors
HTS Code 8541.21.00.95
Additional Feature LOW NOISE
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 14
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2012
Physical
Transistor Element Material SILICON
Package / Case DIP
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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