2N3810A
RoHS
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Package TO-78-6 Metal Can
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description
Bulk Through Hole PNP SEPARATE 2ELEMENTS Bipolar (BJT) Transistor Array 150 @ 1mA 5V 50mA 600mW 100MHz
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Buying Options
Total Price: USD $9.39
Unit Price: USD $9.38696
≥1 USD $9.38696
Inventory: 68
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Frequency - Transition 100MHz
Transition Frequency 100MHz
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 100μA
Current - Collector Cutoff (Max) 10nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA 5V
Transistor Type 2 PNP (Dual)
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Power - Max 600mW
Configuration SEPARATE, 2 ELEMENTS
Number of Elements 2
Qualification Status Not Qualified
JESD-30 Code O-MBCY-W6
Pin Count 6
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form WIRE
Terminal Position BOTTOM
Subcategory Other Transistors
HTS Code 8541.21.00.95
Additional Feature LOW NOISE
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2013
Packaging Bulk
Operating Temperature -65°C~200°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-78-6 Metal Can
Mounting Type Through Hole
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