2N2223
RoHS
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Package TO-78-6 Metal Can
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description
Bulk Through Hole NPN SEPARATE 2ELEMENTS Bipolar (BJT) Transistor Array 50 @ 10mA 5V 500mA 600mW 50MHz
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Power Dissipation-Max (Abs) 0.6W
Frequency - Transition 50MHz
Transition Frequency 50MHz
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 5mA, 50mA
Current - Collector Cutoff (Max) 10nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Transistor Type 2 NPN (Dual)
Polarity/Channel Type NPN
Transistor Application SWITCHING
Power - Max 600mW
Configuration SEPARATE, 2 ELEMENTS
Number of Elements 2
Qualification Status Not Qualified
JESD-30 Code O-MBCY-W6
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form WIRE
Terminal Position BOTTOM
Subcategory Other Transistors
HTS Code 8541.21.00.95
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2017
Packaging Bulk
Operating Temperature -65°C~200°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-78-6 Metal Can
Mounting Type Through Hole
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