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Technical Details
Physical
Surface Mount YES
Transistor Element Material SILICON
Technical
JESD-609 Code e0
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-CDFM-F2
Qualification Status Not Qualified
Operating Temperature (Max) 200°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
DS Breakdown Voltage-Min 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 237W
Highest Frequency Band L B
Compliance
RoHS Status Non-RoHS Compliant
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