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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Highest Frequency Band L B
Power Dissipation-Max (Abs) 55W
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 65V
Polarity/Channel Type N-CHANNEL
Transistor Application AMPLIFIER
Case Connection SOURCE
Operating Mode ENHANCEMENT MODE
Configuration SINGLE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-CDFM-F2
Pin Count 2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Subcategory FET General Purpose Power
Additional Feature HIGH RELIABILITY
ECCN Code EAR99
Number of Terminations 2
Physical
Transistor Element Material SILICON
Surface Mount YES
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