BLF7G27L-200PB,112
RoHS
/
Package /
Category RF/IF and RFID / RF Amplifiers
Description
TRANS RF LDMOS 200W SOT1110A
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Highest Frequency Band S B
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 65V
Polarity/Channel Type N-CHANNEL
Transistor Application AMPLIFIER
Case Connection SOURCE
Operating Mode ENHANCEMENT MODE
Configuration COMMON SOURCE, 3 ELEMENTS
Number of Elements 3
JESD-30 Code R-CQFM-X8
Reference Standard IEC-60134
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position QUAD
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2010
Packaging Bulk
Physical
Transistor Element Material SILICON
Surface Mount YES
Supply Chain
Factory Lead Time 13 Weeks
Alternative Model
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