Ambient Temperature Range High 125°C
High Side Voltage - Max (Bootstrap) 600V
Built-in Protections UNDER VOLTAGE
Logic Voltage - VIL, VIH 0.8V 2.5V
Max Junction Temperature (Tj) 150°C
Current - Peak Output (Source, Sink) 350mA 650mA
Gate Type IGBT, N-Channel MOSFET
Driven Configuration Half-Bridge
Rise / Fall Time (Typ) 60ns, 30ns
Turn-Off Delay Time 200 ns
Turn On Delay Time 170 ns
Nominal Supply Current 600μA
Max Power Dissipation 625mW
Subcategory MOSFET Drivers
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ