Ambient Temperature Range High 125°C
High Side Voltage - Max (Bootstrap) 600V
Built-in Protections TRANSIENT; OVER CURRENT; UNDER VOLTAGE
Logic Voltage - VIL, VIH 0.8V 2.5V
Max Junction Temperature (Tj) 150°C
Current - Peak Output (Source, Sink) 4A 4A
Gate Type IGBT, N-Channel MOSFET
Driven Configuration Half-Bridge
Rise / Fall Time (Typ) 22ns 18ns
Turn-Off Delay Time 170 ns
Turn On Delay Time 170 ns
Nominal Supply Current 120μA
Base Part Number IRS21867SPBF
Max Power Dissipation 625mW
Subcategory MOSFET Drivers
Moisture Sensitivity Level (MSL) 2 (1 Year)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ