High Side Voltage - Max (Bootstrap) 200V
Built-in Protections TRANSIENT; UNDER VOLTAGE
Logic Voltage - VIL, VIH 0.8V 2.5V
Current - Peak Output (Source, Sink) 290mA 600mA
Gate Type IGBT, N-Channel MOSFET
Driven Configuration Half-Bridge
Rise / Fall Time (Typ) 70ns, 35ns
Turn-Off Delay Time 150 ns
Turn On Delay Time 680 ns
Nominal Supply Current 270μA
Base Part Number IRS2004SPBF
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 625mW
Subcategory MOSFET Drivers
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 2 (1 Year)
Part Status Not For New Designs
Operating Temperature -40°C~150°C TJ