Ambient Temperature Range High 125°C
High Side Voltage - Max (Bootstrap) 200V
Built-in Protections TRANSIENT; UNDER VOLTAGE
Logic Voltage - VIL, VIH 0.8V 2.5V
Max Junction Temperature (Tj) 150°C
Current - Peak Output (Source, Sink) 290mA 600mA
Gate Type IGBT, N-Channel MOSFET
Driven Configuration Half-Bridge
Rise / Fall Time (Typ) 70ns, 35ns
Turn-Off Delay Time 150 ns
Turn On Delay Time 680 ns
Nominal Supply Current 150μA
Base Part Number IRS2004SPBF
Max Power Dissipation 625mW
Subcategory MOSFET Drivers
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 2 (1 Year)
Part Status Not For New Designs
Operating Temperature -40°C~150°C TJ