FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 12V
Drain-source On Resistance-Max 0.05Ohm
Drain Current-Max (Abs) (ID) 4.4A
Polarity/Channel Type P-CHANNEL
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Function Power Management
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ