4N30
RoHS
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Package 6-DIP (0.300, 7.62mm)
Category Isolators / Optoisolators - Transistor, Photovoltaic Output
Description
Transistor Output Optocouplers DIP-6 PHOTO DARL
PDF
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5456
≥1 USD $0.5456
≥10 USD $0.4664
≥100 USD $0.435424
≥500 USD $0.34841
≥1000 USD $0.323532
≥3000 USD $0.27375
Inventory: 446
Minimum: 1
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Technical Details
Technical
Vce Saturation (Max) 1V
Turn On / Turn Off Time (Typ) 5μs, 40μs (Max)
Current Transfer Ratio (Min) 100% @ 10mA
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 330 mJ
Current - DC Forward (If) (Max) 80mA
DS Breakdown Voltage-Min 300V
Pulsed Drain Current-Max (IDM) 56A
Drain-source On Resistance-Max 0.29Ohm
Voltage - Output (Max) 30V
Current - Output / Channel 150mA
JEDEC-95 Code TO-263
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Input Type DC
Case Connection DRAIN
Voltage - Forward (Vf) (Typ) 1.2V
Operating Mode ENHANCEMENT MODE
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Output Type Darlington with Base
Voltage - Isolation 5300Vrms
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Base Part Number 4N30
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Packaging Tube
Operating Temperature -55°C~100°C
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 6-DIP (0.300, 7.62mm)
Mounting Type Through Hole
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