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MT4HTF3264HZ-667G1

Micron Technology Inc.
RoHS
RoHS RoHS compliant
Package 200-SODIMM
Category Memory Cards, Modules / Memory - Modules
Description DRAM Module DDR2 SDRAM 256Mbyte 200SODIMM
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Technical Details

Compliance

RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

Refresh Cycles 8192
I/O Type COMMON
Max Frequency 667MHz
Standby Current-Max 0.028A
Memory Width 64
Output Characteristics 3-STATE
Data Bus Width 64b
Clock Frequency 333MHz
Memory Type DDR2 SDRAM
Speed 667MT/s
Memory Size 256MB
Min Supply Voltage 1.7V
Max Supply Voltage 1.9V
Temperature Grade COMMERCIAL
Number of Elements 4
Operating Supply Voltage 1.8V
Time@Peak Reflow Temperature-Max (s) 30
Terminal Pitch 0.6mm
Supply Voltage 1.8V
Peak Reflow Temperature (Cel) 260
Terminal Position DUAL
Technology CMOS
Subcategory DRAMs
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish MATTE TIN
Number of Terminations 200
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2010

Physical

Number of Pins 200
Package / Case 200-SODIMM
Mount Socket

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