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MT16VDDF12864HY-40BJ1

Micron Technology Inc.
RoHS
RoHS RoHS compliant
Package 200-SODIMM
Category Memory Cards, Modules / Memory - Modules
Description DRAM Module DDR SDRAM 1Gbyte 200SODIMM
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Technical Details

Compliance

RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

Refresh Cycles 8192
I/O Type COMMON
Access Time (Max) 0.7 ns
Max Frequency 400MHz
Memory Density 8589934592 bit
Standby Current-Max 0.08A
Memory Width 64
Output Characteristics 3-STATE
Organization 128MX64
Data Bus Width 64b
Supply Current-Max 5.52mA
Memory Type DDR SDRAM
Speed 400MT/s
Memory Size 1GB
Min Supply Voltage 2.5V
Max Supply Voltage 2.7V
Temperature Grade COMMERCIAL
Number of Elements 16
Operating Supply Voltage 2.6V
Time@Peak Reflow Temperature-Max (s) 30
Terminal Pitch 0.6mm
Supply Voltage 2.6V
Peak Reflow Temperature (Cel) 260
Terminal Position DUAL
Technology CMOS
Subcategory DRAMs
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish MATTE TIN
Number of Terminations 200
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2005

Physical

Number of Pins 200
Package / Case 200-SODIMM
Mount Socket

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