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MT47H512M8WTR-3:C

Micron Technology Inc.
RoHS
RoHS RoHS compliant
Package 63-TFBGA
Category Integrated Circuits (ICs) / Memory
Description Obsolete 3-STATE 2012 BOTTOM ic memory 0C~85C TC 1.8V 4Gb 0.8mm
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

Refresh Cycles 8192
I/O Type COMMON
Max Frequency 667MHz
Density 4 Gb
Address Bus Width 18b
Write Cycle Time - Word, Page 15ns
Memory Width 8
Output Characteristics 3-STATE
Organization 512MX8
Data Bus Width 8b
Memory Interface Parallel
Memory Format DRAM
Access Time 450ps
Clock Frequency 333MHz
Memory Type Volatile
Memory Size 4Gb 512M x 8
Operating Supply Voltage 1.8V
Base Part Number MT47H512M8
Time@Peak Reflow Temperature-Max (s) 30
Terminal Pitch 0.8mm
Supply Voltage 1.8V
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Voltage - Supply 1.7V~1.9V
Technology SDRAM - DDR2
Terminal Finish MATTE TIN
Number of Terminations 63
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2012
Packaging Tray
Operating Temperature 0°C~85°C TC

Physical

Number of Pins 63
Package / Case 63-TFBGA
Mounting Type Surface Mount
Mount Surface Mount

Alternative Model

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