MT47H512M4EB-3:C
RoHS 
RoHS compliant
RoHS compliantPackage 60-TFBGA
Category Integrated Circuits (ICs) / Memory
Description
Obsolete 3-STATE 2012 BOTTOM ic memory 0C~85C TC 1.7V 2Gb 0.225mA
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 60-TFBGA
Surface Mount YES
Number of Pins 60
Technical
Operating Temperature 0°C~85°C TC
Packaging Tray
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 60
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AUTO/SELF REFRESH
HTS Code 8542.32.00.36
Technology SDRAM - DDR2
Voltage - Supply 1.7V~1.9V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 0.8mm
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MT47H512M4
Pin Count 60
Operating Supply Voltage 1.8V
Supply Voltage-Max (Vsup) 1.9V
Supply Voltage-Min (Vsup) 1.7V
Memory Size 2Gb 512M x 4
Number of Ports 1
Memory Type Volatile
Clock Frequency 333MHz
Supply Current-Max 0.225mA
Access Time 450ps
Memory Format DRAM
Memory Interface Parallel
Data Bus Width 4b
Organization 512MX4
Output Characteristics 3-STATE
Memory Width 4
Write Cycle Time - Word, Page 15ns
Address Bus Width 18b
Density 2 Gb
Standby Current-Max 0.012A
Max Frequency 667MHz
I/O Type COMMON
Refresh Cycles 8192
Sequential Burst Length 48
Interleaved Burst Length 48
Dimensions
Height Seated (Max) 1.2mm
Length 11.5mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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