MT47H512M4EB-187E:C
RoHS 
RoHS compliant
RoHS compliantPackage 60-TFBGA
Category Integrated Circuits (ICs) / Memory
Description
Discontinued 3-STATE 2012 BOTTOM ic memory 0C~85C TC 1.7V 2Gb 11.5mm
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Length 11.5mm
Height Seated (Max) 1.2mm
Technical
Interleaved Burst Length 48
Sequential Burst Length 48
Refresh Cycles 8192
I/O Type COMMON
Max Frequency 1.066GHz
Density 2 Gb
Address Bus Width 18b
Write Cycle Time - Word, Page 15ns
Memory Width 4
Output Characteristics 3-STATE
Organization 512MX4
Data Bus Width 4b
Memory Interface Parallel
Memory Format DRAM
Access Time 350ps
Clock Frequency 533MHz
Memory Type Volatile
Number of Ports 1
Memory Size 2Gb 512M x 4
Supply Voltage-Min (Vsup) 1.7V
Supply Voltage-Max (Vsup) 1.9V
Operating Supply Voltage 1.8V
Pin Count 60
Base Part Number MT47H512M4
Time@Peak Reflow Temperature-Max (s) 30
Terminal Pitch 0.8mm
Supply Voltage 1.8V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Voltage - Supply 1.7V~1.9V
Technology SDRAM - DDR2
HTS Code 8542.32.00.36
Additional Feature AUTO/SELF REFRESH
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 60
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Discontinued
Pbfree Code yes
JESD-609 Code e1
Published 2012
Packaging Tray
Operating Temperature 0°C~85°C TC
Physical
Number of Pins 60
Surface Mount YES
Package / Case 60-TFBGA
Mounting Type Surface Mount
Alternative Model
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