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MT41J256M8HX-15E AAT:D

Micron Technology Inc.
RoHS
RoHS RoHS compliant
Package 78-TFBGA
Category Integrated Circuits (ICs) / Memory
Description Obsolete 3-STATE 2008 AEC-Q100 DRAM Memory -40C~105C TC 1.425V 2147483648bit 0.012A
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Dimensions

Width 9mm
Length 11.5mm
Height Seated (Max) 1.2mm

Technical

Interleaved Burst Length 8
Sequential Burst Length 8
Refresh Cycles 8192
I/O Type COMMON
Screening Level AEC-Q100
Memory Density 2147483648 bit
Standby Current-Max 0.012A
Memory Width 8
Output Characteristics 3-STATE
Organization 256MX8
Memory Interface Parallel
Memory Format DRAM
Access Time 13.5ns
Supply Current-Max 0.385mA
Clock Frequency 667MHz
Operating Mode SYNCHRONOUS
Memory Type Volatile
Number of Ports 1
Memory Size 2Gb 256M x 8
Supply Voltage-Min (Vsup) 1.425V
Power Supplies 1.5V
Supply Voltage-Max (Vsup) 1.575V
Qualification Status Not Qualified
JESD-30 Code R-PBGA-B78
Pin Count 78
Base Part Number MT41J256M8
Time@Peak Reflow Temperature-Max (s) 30
Terminal Pitch 0.8mm
Supply Voltage 1.5V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Voltage - Supply 1.425V~1.575V
Technology SDRAM - DDR3
HTS Code 8542.32.00.36
Additional Feature AUTO/SELF REFRESH
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 78
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2008
Packaging Bulk
Operating Temperature -40°C~105°C TC

Physical

Surface Mount YES
Package / Case 78-TFBGA
Mounting Type Surface Mount

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