Memory Density 4194304 bit
Standby Current-Max 0.00013A
Write Cycle Time - Word, Page 55ns
Output Characteristics 3-STATE
Memory Interface Parallel
Supply Current-Max 0.028mA
Operating Mode ASYNCHRONOUS
Memory Size 4Mb 256K x 16
Supply Voltage-Min (Vsup) 2.5V
Supply Voltage-Max (Vsup) 3.6V
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Voltage - Supply 2.5V~3.6V
Technology PSRAM (Pseudo SRAM)
Subcategory Other Memory ICs
Terminal Finish Matte Tin (Sn) - annealed
Number of Terminations 44
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Operating Temperature -40°C~85°C TA