IDT71V65802S100BQ
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Package /
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2007 Parallel (Memory Format) Memory 70C 3.135V 9437184bit 0.04A
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Technical Details
Physical
Surface Mount YES
Number of Pins 165
Technical
Published 2007
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 3
Number of Terminations 165
ECCN Code 3A991.B.2.A
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature PIPELINED ARCHITECTURE
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 1mm
Reach Compliance Code not_compliant
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 165
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.465V
Power Supplies 3.3V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 3.135V
Interface Parallel
Memory Type RAM, SRAM
Operating Mode SYNCHRONOUS
Supply Current-Max 0.25mA
Organization 512KX18
Output Characteristics 3-STATE
Memory Width 18
Standby Current-Max 0.04A
Memory Density 9437184 bit
Access Time (Max) 5 ns
I/O Type COMMON
Dimensions
Height Seated (Max) 1.2mm
Length 15mm
Width 13mm
Compliance
RoHS Status Non-RoHS Compliant
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