IDT71V416YL15Y
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Package /
Category Integrated Circuits (ICs) / Memory
Description
J BEND 3-STATE 2008 Parallel (Memory Format) Memory 70C 3V 4194304bit 0.01A
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Technical Details
Technical
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 44
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.6V
Power Supplies 3.3V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 3V
Interface Parallel
Memory Type RAM, SRAM - Asynchronous
Supply Current-Max 0.16mA
Organization 256KX16
Output Characteristics 3-STATE
Memory Width 16
Standby Current-Max 0.01A
Memory Density 4194304 bit
Access Time (Max) 15 ns
I/O Type COMMON
Standby Voltage-Min 3V
Terminal Pitch 1.27mm
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 225
Terminal Form J BEND
Terminal Position DUAL
Technology CMOS
Subcategory SRAMs
HTS Code 8542.32.00.41
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Lead (Sn85Pb15)
ECCN Code 3A991.B.2.A
Number of Terminations 44
Moisture Sensitivity Level (MSL) 3
Pbfree Code no
JESD-609 Code e0
Published 2008
Dimensions
Height Seated (Max) 3.683mm
Length 28.575mm
Width 10.16mm
Compliance
RoHS Status Non-RoHS Compliant
Physical
Number of Pins 44
Surface Mount YES
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