IDT71V416VS10Y
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Category Integrated Circuits (ICs) / Memory
Description
J BEND 3-STATE 2005 Parallel (Memory Format) Memory 70C 3V 4194304bit 0.02A
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Technical Details
Physical
Surface Mount YES
Number of Pins 44
Technical
Published 2005
JESD-609 Code e3
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3
Number of Terminations 44
ECCN Code 3A991.B.2.A
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 70°C
Min Operating Temperature 0°C
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 1.27mm
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 44
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.6V
Power Supplies 3.3V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 3V
Interface Parallel
Memory Type RAM, SRAM - Asynchronous
Supply Current-Max 0.2mA
Organization 256KX16
Output Characteristics 3-STATE
Memory Width 16
Standby Current-Max 0.02A
Memory Density 4194304 bit
Access Time (Max) 10 ns
I/O Type COMMON
Standby Voltage-Min 3V
Dimensions
Height Seated (Max) 3.683mm
Length 28.575mm
Width 10.16mm
Compliance
RoHS Status Non-RoHS Compliant
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