IDT71V416VL15BEG
RoHS
/
Package TFBGA
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2005 Parallel (Memory Format) Memory 70C 3V 4194304bit 0.01A
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Technical Details
Physical
Package / Case TFBGA
Surface Mount YES
Technical
Published 2005
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 3
Number of Terminations 48
ECCN Code 3A991.B.2.A
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.75mm
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 48
JESD-30 Code S-PBGA-B48
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.6V
Power Supplies 3.3V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 3V
Interface Parallel
Memory Type RAM, SRAM - Asynchronous
Supply Current-Max 0.16mA
Organization 256KX16
Output Characteristics 3-STATE
Memory Width 16
Standby Current-Max 0.01A
Memory Density 4194304 bit
Access Time (Max) 15 ns
I/O Type COMMON
Standby Voltage-Min 3V
Dimensions
Height Seated (Max) 1.2mm
Length 9mm
Width 9mm
Compliance
RoHS Status RoHS Compliant
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