IDT71V416S10BEI8
RoHS
/
Package TFBGA
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2007 Parallel (Memory Format) Memory 85C 3V 4194304bit 0.02A
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Technical Details
Physical
Package / Case TFBGA
Surface Mount YES
Technical
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 4
Number of Terminations 48
ECCN Code 3A991.B.2.A
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 85°C
Min Operating Temperature -40°C
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.75mm
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 48
JESD-30 Code S-PBGA-B48
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.6V
Power Supplies 3.3V
Temperature Grade INDUSTRIAL
Supply Voltage-Min (Vsup) 3V
Interface Parallel
Memory Type RAM, SRAM - Asynchronous
Supply Current-Max 0.2mA
Organization 256KX16
Output Characteristics 3-STATE
Memory Width 16
Standby Current-Max 0.02A
Memory Density 4194304 bit
Access Time (Max) 10 ns
I/O Type COMMON
Standby Voltage-Min 3V
Dimensions
Height Seated (Max) 1.2mm
Length 9mm
Width 9mm
Compliance
RoHS Status Non-RoHS Compliant
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