IDT71V3556S166BQGI
RoHS
/
Package /
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2007 Parallel (Memory Format) Memory 85C 3.135V 4718592bit 0.36mA
PDF
/
Inventory: 945
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
RoHS Status RoHS Compliant
Dimensions
Width 13mm
Length 15mm
Height Seated (Max) 1.2mm
Technical
Standby Voltage-Min 3.14V
I/O Type COMMON
Access Time (Max) 3.5 ns
Memory Density 4718592 bit
Standby Current-Max 0.045A
Memory Width 36
Output Characteristics 3-STATE
Organization 128KX36
Supply Current-Max 0.36mA
Operating Mode SYNCHRONOUS
Memory Type RAM, SRAM
Interface Parallel
Supply Voltage-Min (Vsup) 3.135V
Temperature Grade INDUSTRIAL
Power Supplies 3.3V
Supply Voltage-Max (Vsup) 3.465V
Qualification Status Not Qualified
Pin Count 165
Time@Peak Reflow Temperature-Max (s) 30
Frequency 166MHz
Reach Compliance Code unknown
Terminal Pitch 1mm
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
HTS Code 8542.32.00.41
Min Operating Temperature -40°C
Max Operating Temperature 85°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code 3A991.B.2.A
Number of Terminations 165
Moisture Sensitivity Level (MSL) 3
JESD-609 Code e1
Published 2007
Physical
Number of Pins 165
Surface Mount YES
Recommended For You
IDT71V3556S166BQGI+price,IDT71V3556S166BQGI+datasheet,IDT71V3556S166BQGI+in stock,buy+IDT71V3556S166BQGI,finder+IDT71V3556S166BQGI,IDT71V3556S166BQGI+tutorials,IDT71V3556S166BQGI+download