IDT71V3556S166BQ8
RoHS
/
Package /
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2007 Parallel (Memory Format) Memory 70C 3.3V 4718592bit 0.04A
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Standby Voltage-Min 3.14V
I/O Type COMMON
Access Time (Max) 3.5 ns
Memory Density 4718592 bit
Standby Current-Max 0.04A
Memory Width 36
Output Characteristics 3-STATE
Organization 128KX36
Supply Current-Max 0.35mA
Operating Mode SYNCHRONOUS
Memory Type RAM, SRAM
Interface Parallel
Temperature Grade COMMERCIAL
Power Supplies 3.3V
Qualification Status Not Qualified
Frequency 166MHz
Reach Compliance Code not_compliant
Terminal Pitch 1mm
Supply Voltage 3.3V
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Lead (Sn63Pb37)
Number of Terminations 165
Moisture Sensitivity Level (MSL) 3
JESD-609 Code e0
Published 2007
Packaging Tape & Reel (TR)
Physical
Number of Pins 165
Surface Mount YES
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