IDT71V3556S100BQG8
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2007 Parallel (Memory Format) Memory 70C 3.3V 4718592bit 0.04A
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Technical Details
Physical
Surface Mount YES
Number of Pins 165
Technical
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 3
Number of Terminations 165
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Supply Voltage 3.3V
Terminal Pitch 1mm
Reach Compliance Code unknown
Frequency 100MHz
Qualification Status Not Qualified
Power Supplies 3.3V
Temperature Grade COMMERCIAL
Interface Parallel
Memory Type RAM, SRAM
Operating Mode SYNCHRONOUS
Supply Current-Max 0.25mA
Organization 128KX36
Output Characteristics 3-STATE
Memory Width 36
Standby Current-Max 0.04A
Memory Density 4718592 bit
Access Time (Max) 5 ns
I/O Type COMMON
Standby Voltage-Min 3.14V
Compliance
RoHS Status RoHS Compliant
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