IDT71V25761YSA166BQ
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2009 Parallel (Memory Format) Memory 70C 3.135V 4718592bit 0.035A
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Dimensions
Width 13mm
Length 15mm
Height Seated (Max) 1.2mm
Technical
Standby Voltage-Min 3.14V
I/O Type COMMON
Access Time (Max) 3.5 ns
Memory Density 4718592 bit
Standby Current-Max 0.035A
Memory Width 36
Output Characteristics 3-STATE
Organization 128KX36
Supply Current-Max 0.33mA
Operating Mode SYNCHRONOUS
Memory Type RAM, SRAM
Interface Parallel
Supply Voltage-Min (Vsup) 3.135V
Temperature Grade INDUSTRIAL
Power Supplies 2.53.3V
Supply Voltage-Max (Vsup) 3.465V
Qualification Status Not Qualified
Pin Count 165
Time@Peak Reflow Temperature-Max (s) 20
Frequency 166MHz
Reach Compliance Code not_compliant
Terminal Pitch 1mm
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 225
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
HTS Code 8542.32.00.41
Additional Feature PIPELINED ARCHITECTURE
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Lead (Sn63Pb37)
ECCN Code 3A991.B.2.A
Number of Terminations 165
Moisture Sensitivity Level (MSL) 3
JESD-609 Code e0
Published 2009
Physical
Number of Pins 165
Surface Mount YES
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