IDT71V25761YSA166BG
RoHS
/
Package BGA
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2009 Parallel (Memory Format) Memory 70C 3.135V 4718592bit 0.03A
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Technical Details
Physical
Package / Case BGA
Surface Mount YES
Technical
Published 2009
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 3
Number of Terminations 119
ECCN Code 3A991.B.2.A
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature PIPELINED ARCHITECTURE
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 1.27mm
Reach Compliance Code not_compliant
Frequency 166MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 119
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.465V
Power Supplies 2.53.3V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 3.135V
Interface Parallel
Memory Type RAM, SRAM
Operating Mode SYNCHRONOUS
Supply Current-Max 0.32mA
Organization 128KX36
Output Characteristics 3-STATE
Memory Width 36
Standby Current-Max 0.03A
Memory Density 4718592 bit
Access Time (Max) 3.5 ns
I/O Type COMMON
Standby Voltage-Min 3.14V
Dimensions
Height Seated (Max) 2.36mm
Length 22mm
Width 14mm
Compliance
RoHS Status Non-RoHS Compliant
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