IDT71V25761SA183BQ
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Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2009 Parallel (Memory Format) Memory 70C 3.135V 4718592bit 0.03A
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Technical Details
Physical
Surface Mount YES
Number of Pins 165
Technical
Published 2009
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 3
Number of Terminations 165
ECCN Code 3A991.B.2.A
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature PIPELINED ARCHITECTURE
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 1mm
Standby Voltage-Min 3.14V
I/O Type COMMON
Access Time (Max) 3.3 ns
Memory Density 4718592 bit
Standby Current-Max 0.03A
Memory Width 36
Output Characteristics 3-STATE
Organization 128KX36
Supply Current-Max 0.34mA
Operating Mode SYNCHRONOUS
Memory Type RAM, SRAM
Interface Parallel
Supply Voltage-Min (Vsup) 3.135V
Temperature Grade COMMERCIAL
Power Supplies 2.53.3V
Supply Voltage-Max (Vsup) 3.465V
Qualification Status Not Qualified
Pin Count 165
Time@Peak Reflow Temperature-Max (s) 20
Frequency 183MHz
Reach Compliance Code not_compliant
Compliance
RoHS Status Non-RoHS Compliant
Dimensions
Width 13mm
Length 15mm
Height Seated (Max) 1.2mm
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