IDT71T75902S80BG8
RoHS
/
Package BGA
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2005 Parallel (Memory Format) Memory 70C 2.375V 18874368bit 0.04A
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Technical Details
Physical
Package / Case BGA
Surface Mount YES
Technical
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 3
Number of Terminations 119
ECCN Code 3A991.B.2.A
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature FLOW-THROUGH ARCHITECTURE
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 2.5V
Terminal Pitch 1.27mm
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 119
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 2.625V
Power Supplies 2.5V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 2.375V
Interface Parallel
Memory Type RAM, SRAM
Operating Mode SYNCHRONOUS
Clock Frequency 95MHz
Supply Current-Max 0.25mA
Organization 1MX18
Output Characteristics 3-STATE
Memory Width 18
Standby Current-Max 0.04A
Memory Density 18874368 bit
Access Time (Max) 8 ns
I/O Type COMMON
Standby Voltage-Min 2.38V
Dimensions
Height Seated (Max) 2.36mm
Length 22mm
Width 14mm
Compliance
RoHS Status Non-RoHS Compliant
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