IDT71T75602S200BGGI8
RoHS
/
Package BGA
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2010 Parallel (Memory Format) Memory 85C 2.375V 18874368bit 14mm
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Technical Details
Physical
Package / Case BGA
Surface Mount YES
Technical
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 3
Number of Terminations 119
ECCN Code 3A991.B.2.A
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Additional Feature PIPELINED ARCHITECTURE
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 2.5V
Terminal Pitch 1.27mm
Reach Compliance Code unknown
Frequency 200MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 119
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 2.625V
Power Supplies 2.5V
Temperature Grade INDUSTRIAL
Supply Voltage-Min (Vsup) 2.375V
Interface Parallel
Memory Type RAM, SRAM
Operating Mode SYNCHRONOUS
Organization 512KX36
Output Characteristics 3-STATE
Memory Width 36
Memory Density 18874368 bit
Access Time (Max) 3.2 ns
I/O Type COMMON
Standby Voltage-Min 2.38V
Dimensions
Height Seated (Max) 2.36mm
Length 22mm
Width 14mm
Compliance
RoHS Status RoHS Compliant
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