IDT71T016SA12BF8
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Package /
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2008 Parallel (Memory Format) Memory 70C 2.375V 0.015A 7mm
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Technical Details
Physical
Surface Mount YES
Number of Pins 48
Technical
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 3
Number of Terminations 48
ECCN Code 3A991.B.2.B
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 2.5V
Terminal Pitch 0.75mm
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 48
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 2.625V
Power Supplies 2.5V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 2.375V
Interface Parallel
Memory Type RAM, SRAM - Asynchronous
Supply Current-Max 0.15mA
Organization 64KX16
Output Characteristics 3-STATE
Memory Width 16
Standby Current-Max 0.015A
Access Time (Max) 12 ns
I/O Type COMMON
Standby Voltage-Min 2.38V
Dimensions
Height Seated (Max) 1.34mm
Length 7mm
Width 7mm
Compliance
RoHS Status Non-RoHS Compliant
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