IDT71P79804S167BQI8
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2008 Parallel (Memory Format) Memory 85C 1.5/1.81.8V 18874368bit 0.335A
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Technical Details
Physical
Surface Mount YES
Number of Pins 165
Technical
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 3
Number of Terminations 165
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Terminal Pitch 1mm
Reach Compliance Code not_compliant
Frequency 167MHz
Qualification Status Not Qualified
Power Supplies 1.5/1.81.8V
Interface Parallel
Memory Type DDR, RAM, SRAM
Operating Mode SYNCHRONOUS
Supply Current-Max 0.7mA
Organization 1MX18
Output Characteristics 3-STATE
Memory Width 18
Standby Current-Max 0.335A
Memory Density 18874368 bit
Access Time (Max) 0.5 ns
I/O Type SEPARATE
Standby Voltage-Min 1.7V
Compliance
RoHS Status Non-RoHS Compliant
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