IDT71P72804S250BQ
RoHS
/
Package /
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2006 Parallel (Memory Format) Memory 70C 1.7V 18874368bit 13mm
PDF
/
Buying Options
Total Price: USD $9.29
Unit Price: USD $9.29385
≥1 USD $9.29385
≥10 USD $7.62565
≥100 USD $7.3872
≥500 USD $7.14875
≥1000 USD $6.9103
Inventory: 1284
Minimum: 1
-
+
Technical Details
Physical
Surface Mount YES
Number of Pins 165
Technical
Published 2006
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 3
Number of Terminations 165
ECCN Code 3A991.B.2.A
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 1mm
Reach Compliance Code not_compliant
Frequency 250MHz
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 165
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 1.9V
Power Supplies 1.5/1.81.8V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 1.7V
Interface Parallel
Memory Type QDR, RAM, SRAM
Operating Mode SYNCHRONOUS
Organization 1MX18
Output Characteristics 3-STATE
Memory Width 18
Memory Density 18874368 bit
Access Time (Max) 0.45 ns
I/O Type SEPARATE
Standby Voltage-Min 1.7V
Dimensions
Height Seated (Max) 1.2mm
Length 15mm
Width 13mm
Compliance
RoHS Status Non-RoHS Compliant
Recommended For You
IDT71P72804S250BQ+price,IDT71P72804S250BQ+datasheet,IDT71P72804S250BQ+in stock,buy+IDT71P72804S250BQ,finder+IDT71P72804S250BQ,IDT71P72804S250BQ+tutorials,IDT71P72804S250BQ+download